Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
220 mA, 400 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-666
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
2.8 Ω, 7.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
Latime
1.3mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.6mm
Tara de origine
Hong Kong
Detalii produs
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,35
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,416
Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
€ 0,35
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,416
Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
220 mA, 400 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-666
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
2.8 Ω, 7.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
Latime
1.3mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.6mm
Tara de origine
Hong Kong
Detalii produs