Documente tehnice
Specificatii
Marca
IXYSMaximum Continuous Collector Current
650 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
2.1 kW
Tip pachet
SimBus F
Configuration
Dual
Montare
PCB Mount
Channel Type
N
Numar pini
11
Transistor Configuration
Series
Dimensiuni
152 x 62 x 17mm
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-40 °C
Tara de origine
Germany
Detalii produs
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 187,63
Buc. (Intr-o cutie de 3) (fara TVA)
€ 223,28
Buc. (Intr-o cutie de 3) (cu TVA)
3
€ 187,63
Buc. (Intr-o cutie de 3) (fara TVA)
€ 223,28
Buc. (Intr-o cutie de 3) (cu TVA)
3
Documente tehnice
Specificatii
Marca
IXYSMaximum Continuous Collector Current
650 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
2.1 kW
Tip pachet
SimBus F
Configuration
Dual
Montare
PCB Mount
Channel Type
N
Numar pini
11
Transistor Configuration
Series
Dimensiuni
152 x 62 x 17mm
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-40 °C
Tara de origine
Germany
Detalii produs
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.