Documente tehnice
Specificatii
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Numar pini
3
Temperatura minima de lucru
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.4V
Timp montare
Surface Mount
Minimum Gate Threshold Voltage
2.5V
Temperatura maxima de lucru
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
250 V
Maximum Gate Source Voltage
±20 V
Dimensiune celula
HiperFET
Inaltime
4.83mm
Lungime
10.41mm
Latime
11.05mm
Maximum Continuous Drain Current
80 A
Maximum Power Dissipation
390 W
Marca
IXYSMaximum Drain Source Resistance
16 mΩ
Tip pachet
D2PAK (TO-263)
Typical Gate Charge @ Vgs
83 @ 10 V nC
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Documente tehnice
Specificatii
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Numar pini
3
Temperatura minima de lucru
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.4V
Timp montare
Surface Mount
Minimum Gate Threshold Voltage
2.5V
Temperatura maxima de lucru
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
250 V
Maximum Gate Source Voltage
±20 V
Dimensiune celula
HiperFET
Inaltime
4.83mm
Lungime
10.41mm
Latime
11.05mm
Maximum Continuous Drain Current
80 A
Maximum Power Dissipation
390 W
Marca
IXYSMaximum Drain Source Resistance
16 mΩ
Tip pachet
D2PAK (TO-263)
Typical Gate Charge @ Vgs
83 @ 10 V nC