Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Serie
HEXFET
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
26 nC @ 15 V
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Incercati din nou mai tarziu
€ 0,74
Buc. (Livrat pe rola) (fara TVA)
€ 0,881
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
25
€ 0,74
Buc. (Livrat pe rola) (fara TVA)
€ 0,881
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
25 - 100 | € 0,74 | € 18,50 |
125 - 225 | € 0,57 | € 14,25 |
250 - 600 | € 0,53 | € 13,25 |
625 - 1225 | € 0,49 | € 12,25 |
1250+ | € 0,45 | € 11,25 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Serie
HEXFET
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
26 nC @ 15 V
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.