Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
26 nC @ 10 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Transistor Material
Si
Serie
HEXFET
Temperatura minima de lucru
-55 °C
Inaltime
1.5mm
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P.O.A.
Impachetare pentru productie (Tub)
5
P.O.A.
Impachetare pentru productie (Tub)
5
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
26 nC @ 10 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Transistor Material
Si
Serie
HEXFET
Temperatura minima de lucru
-55 °C
Inaltime
1.5mm