Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
25 V
Dimensiune celula
HEXFET
Tip pachet
DirectFET ISOMETRIC
Montare
Surface Mount
Maximum Drain Source Resistance
0.0013 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Informatii indisponibile despre stoc
P.O.A.
Dual N-Channel MOSFET Transistor & Diode, 37 A, 25 V DirectFET ISOMETRIC Infineon IRF6715MTRPBF
4800
P.O.A.
Dual N-Channel MOSFET Transistor & Diode, 37 A, 25 V DirectFET ISOMETRIC Infineon IRF6715MTRPBF
Informatii indisponibile despre stoc
4800
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
25 V
Dimensiune celula
HEXFET
Tip pachet
DirectFET ISOMETRIC
Montare
Surface Mount
Maximum Drain Source Resistance
0.0013 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2