Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
IRF3710ZS
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,66
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,975
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 1,66
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,975
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 1,66 | € 16,60 |
50 - 90 | € 1,34 | € 13,40 |
100 - 240 | € 1,26 | € 12,60 |
250 - 490 | € 1,17 | € 11,70 |
500+ | € 1,07 | € 10,70 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
IRF3710ZS
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V