Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
30 V
Tip pachet
D2PAK
Montare
Surface Mount
Numar pini
2 + Tab
Maximum Drain Source Resistance
12.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
9.7 nC @ 4.5 V
Inaltime
4.83mm
Serie
IRF3707ZS
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
Standard
10
P.O.A.
Standard
10
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
30 V
Tip pachet
D2PAK
Montare
Surface Mount
Numar pini
2 + Tab
Maximum Drain Source Resistance
12.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
9.7 nC @ 4.5 V
Inaltime
4.83mm
Serie
IRF3707ZS
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V