Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
8.4 A
Maximum Drain Source Voltage
650 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-30 V, +30 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
17.2 nC @ 10 V
Inaltime
2.41mm
Dimensiune celula
CoolMOS CE
Temperatura minima de lucru
-40 °C
Forward Diode Voltage
0.9V
Detalii produs
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,72
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,857
Buc. (Intr-un pachet de 25) (cu TVA)
25
€ 0,72
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,857
Buc. (Intr-un pachet de 25) (cu TVA)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 100 | € 0,72 | € 18,00 |
125 - 225 | € 0,66 | € 16,50 |
250 - 600 | € 0,63 | € 15,75 |
625 - 1225 | € 0,58 | € 14,50 |
1250+ | € 0,54 | € 13,50 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
8.4 A
Maximum Drain Source Voltage
650 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-30 V, +30 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
17.2 nC @ 10 V
Inaltime
2.41mm
Dimensiune celula
CoolMOS CE
Temperatura minima de lucru
-40 °C
Forward Diode Voltage
0.9V
Detalii produs
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.