Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
200 V
Serie
OptiMOS FD
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
11.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+170 °C
Lungime
10.31mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Latime
9.45mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
4.57mm
Detalii produs
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 8,59
Each (Supplied as a Tape) (fara TVA)
€ 10,222
Each (Supplied as a Tape) (cu TVA)
Standard
2
€ 8,59
Each (Supplied as a Tape) (fara TVA)
€ 10,222
Each (Supplied as a Tape) (cu TVA)
Standard
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Banda |
---|---|---|
2 - 8 | € 8,59 | € 17,18 |
10 - 38 | € 7,14 | € 14,28 |
40 - 98 | € 6,30 | € 12,60 |
100 - 198 | € 5,84 | € 11,68 |
200+ | € 5,50 | € 11,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
200 V
Serie
OptiMOS FD
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
11.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+170 °C
Lungime
10.31mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Latime
9.45mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
4.57mm
Detalii produs
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.