Documente tehnice
Specificatii
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Numar pini
3 + Tab
Temperatura minima de lucru
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
0.9V
Timp montare
Through Hole
Minimum Gate Threshold Voltage
2.5V
Temperatura maxima de lucru
+150 °C
Maximum Gate Threshold Voltage
3.5V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
+30 V
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
24 W
Latime
4.9mm
Dimensiune celula
CoolMOS P7
Tip pachet
TO-220FP
Lungime
10.65mm
Inaltime
16.15mm
Maximum Drain Source Resistance
3.1 Ω
Marca
InfineonTypical Gate Charge @ Vgs
10 nC @ 10 V
Tara de origine
China
Detalii produs
Motor Driven
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Documente tehnice
Specificatii
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Numar pini
3 + Tab
Temperatura minima de lucru
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
0.9V
Timp montare
Through Hole
Minimum Gate Threshold Voltage
2.5V
Temperatura maxima de lucru
+150 °C
Maximum Gate Threshold Voltage
3.5V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
+30 V
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
24 W
Latime
4.9mm
Dimensiune celula
CoolMOS P7
Tip pachet
TO-220FP
Lungime
10.65mm
Inaltime
16.15mm
Maximum Drain Source Resistance
3.1 Ω
Marca
InfineonTypical Gate Charge @ Vgs
10 nC @ 10 V
Tara de origine
China
Detalii produs