Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
270 W
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Dimensiuni
16.13 x 21.1 x 5.21mm
Frecventa minima de auto-rezonanta
-40 °C
Temperatura maxima de lucru
+150 °C
Tara de origine
Germany
Detalii produs
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 5,50
Each (In a Tube of 30) (fara TVA)
€ 6,545
Each (In a Tube of 30) (cu TVA)
30
€ 5,50
Each (In a Tube of 30) (fara TVA)
€ 6,545
Each (In a Tube of 30) (cu TVA)
30
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
30 - 30 | € 5,50 | € 165,00 |
60 - 120 | € 5,03 | € 150,90 |
150+ | € 4,77 | € 143,10 |
Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
270 W
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Dimensiuni
16.13 x 21.1 x 5.21mm
Frecventa minima de auto-rezonanta
-40 °C
Temperatura maxima de lucru
+150 °C
Tara de origine
Germany
Detalii produs
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.