Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
85 A
Maximum Drain Source Voltage
40 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
6.35mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
36 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Lungime
5.49mm
Inaltime
1.1mm
Dimensiune celula
BSC050N04LS G
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
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Incercati din nou mai tarziu
€ 0,45
Buc. (Pe o rola de 5000) (fara TVA)
€ 0,536
Buc. (Pe o rola de 5000) (cu TVA)
5000
€ 0,45
Buc. (Pe o rola de 5000) (fara TVA)
€ 0,536
Buc. (Pe o rola de 5000) (cu TVA)
5000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
85 A
Maximum Drain Source Voltage
40 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
6.35mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
36 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Lungime
5.49mm
Inaltime
1.1mm
Dimensiune celula
BSC050N04LS G
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V