Documente tehnice
Specificatii
Marca
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-30 V
Tip pachet
SOT-143
Montare
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
420
Transistor Configuration
Current Mirror
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Numar pini
4
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Dimensiuni
2.9 x 1.3 x 0.9mm
Detalii produs
General Purpose PNP Transistors, Infineon
Bipolar Transistors, Infineon
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
250
P.O.A.
250
Documente tehnice
Specificatii
Marca
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-30 V
Tip pachet
SOT-143
Montare
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
420
Transistor Configuration
Current Mirror
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Numar pini
4
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Dimensiuni
2.9 x 1.3 x 0.9mm
Detalii produs