Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN/PNP
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Tip pachet
SOT-363 (SC-88)
Montare
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Numar pini
6
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Dimensiuni
2 x 1.25 x 0.9mm
Detalii produs
Dual NPN/PNP Transistors, Infineon
Bipolar Transistors, Infineon
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
Standard
200
P.O.A.
Standard
200
Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN/PNP
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Tip pachet
SOT-363 (SC-88)
Montare
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Numar pini
6
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Dimensiuni
2 x 1.25 x 0.9mm
Detalii produs