Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Serie
HEXFET
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
6.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
11.3mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Tara de origine
Mexico
Detalii produs
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Serie
HEXFET
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
6.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
11.3mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Tara de origine
Mexico
Detalii produs
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.