Documente tehnice
Specificatii
Maximum Continuous Collector Current
54 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
TO-247
Montare
Through Hole
Channel Type
N
Numar pini
3
Dimensiuni
15.87 x 4.82 x 20.82mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
Standard
1
P.O.A.
Standard
1
Documente tehnice
Specificatii
Maximum Continuous Collector Current
54 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
TO-247
Montare
Through Hole
Channel Type
N
Numar pini
3
Dimensiuni
15.87 x 4.82 x 20.82mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.