Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
70 V
Serie
IntelliFET
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3 + Tab
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Latime
3.55mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+125 °C
Lungime
6.55mm
Inaltime
1.65mm
Temperatura minima de lucru
-40 °C
Tara de origine
Germany
Detalii produs
IntelliFET Self-protected MOSFETs, Diodes Inc
IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.
MOSFET Transistors, Diodes Inc.
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P.O.A.
Impachetare pentru productie (Rola)
5
P.O.A.
Impachetare pentru productie (Rola)
5
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
70 V
Serie
IntelliFET
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3 + Tab
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Latime
3.55mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+125 °C
Lungime
6.55mm
Inaltime
1.65mm
Temperatura minima de lucru
-40 °C
Tara de origine
Germany
Detalii produs
IntelliFET Self-protected MOSFETs, Diodes Inc
IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.