Documente tehnice
Specificatii
Marca
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
120 V
Maximum Emitter Base Voltage
10 V
Tip pachet
SOT-89
Timp montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
5000
Maximum Base Emitter Saturation Voltage
1.8 V
Maximum Collector Base Voltage
140 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Inaltime
1.6mm
Latime
2.6mm
Maximum Power Dissipation
2.8 W
Temperatura minima de lucru
-55 °C
Dimensiuni
4.6 x 2.6 x 1.6mm
Temperatura maxima de lucru
+150 °C
Lungime
4.6mm
Tara de origine
China
Detalii produs
Darlington Transistors, Diodes Inc
Transistors, Diodes Inc
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,37
Buc. (Pe o rola de 1000) (fara TVA)
€ 0,44
Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 0,37
Buc. (Pe o rola de 1000) (fara TVA)
€ 0,44
Buc. (Pe o rola de 1000) (cu TVA)
1000
Documente tehnice
Specificatii
Marca
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
120 V
Maximum Emitter Base Voltage
10 V
Tip pachet
SOT-89
Timp montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
5000
Maximum Base Emitter Saturation Voltage
1.8 V
Maximum Collector Base Voltage
140 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Inaltime
1.6mm
Latime
2.6mm
Maximum Power Dissipation
2.8 W
Temperatura minima de lucru
-55 °C
Dimensiuni
4.6 x 2.6 x 1.6mm
Temperatura maxima de lucru
+150 °C
Lungime
4.6mm
Tara de origine
China
Detalii produs