BALLUFF Inductive Barrel-Style Proximity Sensor, M8 x 1, 1.5 mm Detection, PNP Output, 12 → 30 V dc, IP67
Documente tehnice
Specificatii
Body Style
Barrel
Reverse Polarity Protection
Yes
Short Circuit Overload Protection
Yes
Utilizare cu
X2
Shielding
Shielded
Maximum Switching Frequency
1kHz
Dimensiune filet
M8 x 1
Maximum dc Voltage
30V
Temperatura minima de lucru
-25°C
Temperatura maxima de lucru
+70°C
Protectie IP
IP67
Montare
Flush
Housing Material
CuZn
Curent de comutare
200 mA
Detection Range
1.5 mm
Marca
BALLUFFTip iesire
PNP
Tip terminal
3-Pin M8 Connector
Lungime
60mm
Tensiunea de alimentare
12 → 30 V dc
Tara de origine
Hungary
Detalii produs
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 51,45
Buc. (fara TVA)
€ 61,23
Buc. (cu TVA)
1
€ 51,45
Buc. (fara TVA)
€ 61,23
Buc. (cu TVA)
1
Cumpara in pachete mari
| Cantitate | Pret unitar |
|---|---|
| 1 - 2 | € 51,45 |
| 3+ | € 47,70 |
Documente tehnice
Specificatii
Body Style
Barrel
Reverse Polarity Protection
Yes
Short Circuit Overload Protection
Yes
Utilizare cu
X2
Shielding
Shielded
Maximum Switching Frequency
1kHz
Dimensiune filet
M8 x 1
Maximum dc Voltage
30V
Temperatura minima de lucru
-25°C
Temperatura maxima de lucru
+70°C
Protectie IP
IP67
Montare
Flush
Housing Material
CuZn
Curent de comutare
200 mA
Detection Range
1.5 mm
Marca
BALLUFFTip iesire
PNP
Tip terminal
3-Pin M8 Connector
Lungime
60mm
Tensiunea de alimentare
12 → 30 V dc
Tara de origine
Hungary
Detalii produs
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.