HMC327MS8GE Analog Devices, RF Amplifier Power, 21 dB 4 GHz, 8-Pin MSOP
Documente tehnice
Specificatii
Marca
Analog DevicesAmplifier Type
Power
Typical Power Gain
21 dB
Typical Output Power
27dBm
Typical Noise Figure
5dB
Numar canale pe cip
1
Maximum Operating Frequency
4 GHz
Montare
Surface Mount
Tip pachet
MSOP
Numar pini
8
Dimensiuni
3.1 x 3.1 x 0.95mm
Inaltime
0.95mm
Lungime
3.1mm
Temperatura maxima de lucru
+85 °C
Maximum Operating Supply Voltage
5 V
Latime
3.1mm
Dimensiune celula
Hittite
Temperatura minima de lucru
-40 °C
Tara de origine
Taiwan, Province Of China
Detalii produs
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.
Radio Frequency (RF) Amplifiers, Analog Devices
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
50
P.O.A.
50
Documente tehnice
Specificatii
Marca
Analog DevicesAmplifier Type
Power
Typical Power Gain
21 dB
Typical Output Power
27dBm
Typical Noise Figure
5dB
Numar canale pe cip
1
Maximum Operating Frequency
4 GHz
Montare
Surface Mount
Tip pachet
MSOP
Numar pini
8
Dimensiuni
3.1 x 3.1 x 0.95mm
Inaltime
0.95mm
Lungime
3.1mm
Temperatura maxima de lucru
+85 °C
Maximum Operating Supply Voltage
5 V
Latime
3.1mm
Dimensiune celula
Hittite
Temperatura minima de lucru
-40 °C
Tara de origine
Taiwan, Province Of China
Detalii produs
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.