Vishay MOSFETs

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Detalii produs Marca Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
SI1062X-T1-GE3 N-Channel MOSFET, 530 mA, 20 V, 3-Pin SOT-523 Vishay Vishay N 530 mA 20 V 762 mΩ - 0.4V -8 V, +8 V SOT-523 (SC-89) Surface Mount 3 Single Enhancement Power MOSFET 220 mW 43 pF @ 10 V 1.8 nC @ 8 V 1.7 x 0.95 x 0.8mm 16 ns - 2 ns - 0.95mm 0.8mm 1.7mm - +150 °C 1 -55 °C Si -
SI2302DDS-T1-GE3 N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-363 Vishay
  • € 0,16
  • Each (On a Reel of 3000)
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Vishay N 2.6 A 20 V 0.075 Ω 0.85V 0.4V ±8 V SOT-363 Surface Mount 3 Single Enhancement Power MOSFET 0.71 W - 3.5 nC 3.04 x 1.4 x 1.02mm 30 ns - 8 ns 13s 1.4mm 1.02mm 3.04mm 1.2V +150 °C 1 -55 °C - -
SI1403CDL-T1-GE3 P-Channel MOSFET, 1.6 A, 20 V, 6-Pin SOT-363 (SC-70) Vishay Vishay P 1.6 A 20 V 222 mΩ - 0.6V -12 V, +12 V SOT-363 (SC-70) Surface Mount 6 Single Enhancement - 600 mW 281 pF @ -10 V 1.4 nC @ 4.5 V 2.2 x 1.35 x 1mm 19 ns - 18 ns - 1.35mm 1mm 2.2mm - +150 °C 1 -55 °C Si -
SI5935CDC-T1-GE3 Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay Vishay P 3.8 A 20 V 156 mΩ - 0.4V -8 V, +8 V 1206 ChipFET Surface Mount 8 Isolated Enhancement Power MOSFET 3.1 W 455 pF @ -10 V 7 nC @ 5 V 3.1 x 1.7 x 1.1mm 25 ns - 10 ns - 1.7mm 1.1mm 3.1mm - +150 °C 2 -55 °C Si -
SI1302DL-T1-E3 N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 Vishay Vishay N 600 mA 30 V 480 mΩ - 1V -20 V, +20 V SOT-323 (SC-70) Surface Mount 3 Single Enhancement Power MOSFET 280 mW - 0.86 nC @ 10 V 2.2 x 1.35 x 1mm 8 ns - 5 ns - 1.35mm 1mm 2.2mm - +150 °C 1 -55 °C Si -
SUD50P06-15-GE3 P-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Vishay
  • € 1,07
  • Each (On a Reel of 2000)
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Vishay P 50 A 60 V 0.028 Ω -3V -1V ±20 V TO-252AA Surface Mount 3 Single Enhancement Power MOSFET 113 W 4950 pF 110 nC 6.73 x 6.22 x 2.38mm 175 ns - 15 ns 61s 6.22mm 2.38mm 6.73mm -1.6V +150 °C 1 -55 °C - -
SI3483CDV-T1-GE3 P-Channel MOSFET, 7 A, 30 V, 6-Pin TSOP Vishay Vishay P 7 A 30 V 53 mΩ - 1V -20 V, +20 V TSOP Surface Mount 6 Single Enhancement Power MOSFET 4.2 W 1000 pF @ -15 V 22 nC @ 10 V 3.1 x 1.7 x 1mm 30 ns - 45 ns - 1.7mm 1mm 3.1mm - +150 °C 1 -55 °C Si -
SI1317DL-T1-GE3 P-Channel MOSFET, 1.1 A, 20 V, 3-Pin SOT-323 Vishay Vishay P 1.1 A 20 V 270 mΩ - 0.45V -8 V, +8 V SOT-323 (SC-70) Surface Mount 3 Single Enhancement Power MOSFET 500 mW 272 pF @ -10 V 4.3 nC @ 4.5 V 2.2 x 1.35 x 1mm 23 ns - 12 ns - 1.35mm 1mm 2.2mm - +150 °C 1 -50 °C Si -
SI2377EDS-T1-GE3 P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 Vishay Vishay P 3.5 A 20 V 165 mΩ - 0.4V -8 V, +8 V SOT-23 (TO-236) Surface Mount 3 Single Enhancement Power MOSFET 1.8 W - 14 nC @ 8 V 3.04 x 1.4 x 1.02mm 5200 ns - 200 ns - 1.4mm 1.02mm 3.04mm - +150 °C 1 -55 °C Si -
SI1441EDH-T1-GE3 P-Channel MOSFET, 4 A, 20 V, 6-Pin SOT-323 Vishay Vishay P 4 A 20 V 100 mΩ - 0.4V -10 V, +10 V SOT-323 (SC-70) Surface Mount 6 Single Enhancement Power MOSFET 2.8 W - 22 nC @ 8 V 2.2 x 1.35 x 1mm 2500 ns - 150 ns - 1.35mm 1mm 2.2mm - +150 °C 1 -55 °C Si -
SI1050X-T1-GE3 N-Channel MOSFET, 1.34 A, 8 V, 6-Pin SOT-523 Vishay Vishay N 1.34 A 8 V 120 mΩ - 0.35V -5 V, +5 V SOT-523 (SC-89) Surface Mount 6 Single Enhancement Power MOSFET 236 mW 585 pF @ 4 V 7.7 nC @ 5 V 1.7 x 1.2 x 0.6mm 25 ns - 6.8 ns - 1.2mm 0.6mm 1.7mm - +150 °C 1 -55 °C Si -
SI1029X-T1-GE3 Dual N/P-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SOT-523 Vishay Vishay N, P 190 mA, 300 mA 60 V 3 Ω, 8 Ω - 1V -20 V, +20 V SOT-523 (SC-89) Surface Mount 6 Isolated Enhancement - 250 mW 23 pF@ -25 V, 30 pF@ 25 V 1700 nC @ 15 V, 750 nC @ 4.5 V 1.7 x 1.7 x 0.6mm 20 ns, 35 ns - 15 ns, 20 ns - 1.7mm 0.6mm 1.7mm - +150 °C 2 -55 °C Si -
SIR632DP-T1-RE3 N-Channel MOSFET, 29 A, 150 V, 8-Pin SO Vishay
  • € 0,76
  • Each (On a Reel of 3000)
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Vishay N 29 A 150 V 41 mΩ 4V 2V -20 V, +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 69.5 W 740 pF @ 75 V 14 nC @ 10 V 6.25 x 5.26 x 1.12mm 10 ns - 9 ns 18s 5.26mm 1.12mm 6.25mm 1.1V +150 °C 1 -55 °C - -
SIB452DK-T1-GE3 N-Channel MOSFET, 670 mA, 190 V, 6-Pin SC-75 Vishay Vishay N 670 mA 190 V 6 Ω - 0.6V -16 V, +16 V SC-75 Surface Mount 6 Single Enhancement Power MOSFET 13 W 135 pF @ 50 V 4.3 nC @ 10 V 1.7 x 1.7 x 0.8mm 30 ns - 12 ns - 1.7mm 0.8mm 1.7mm - +150 °C 1 -55 °C Si -
SQ2315ES-T1_GE3 P-Channel MOSFET, 3 A, 12 V SQ Rugged, 3-Pin SOT-23 Vishay Vishay P 3 A 12 V 92 mΩ - 0.45V -8 V, +8 V SOT-23 Surface Mount 3 Single Enhancement - 2 W 695 pF @ -6 V 8.4 nC @ 4.5 V 3.04 x 1.4 x 1.02mm 28 ns SQ Rugged 17 ns - 1.4mm 1.02mm 3.04mm - +175 °C 1 -55 °C Si -
SI5902BDC-T1-GE3 Dual N-Channel MOSFET, 3.7 A, 30 V, 8-Pin 1206 ChipFET Vishay Vishay N 3.7 A 30 V 100 mΩ - 1.5V -20 V, +20 V 1206 ChipFET Surface Mount 8 Isolated Enhancement Power MOSFET 3.12 W 220 pF @ 15 V 4.5 nC @ 10 V 3.1 x 1.7 x 1.1mm 12 ns - 15 ns - 1.7mm 1.1mm 3.1mm - +150 °C 2 -55 °C Si -
SIRA90DP-T1-RE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin SO Vishay
  • € 0,70
  • Each (On a Reel of 3000)
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Vishay N 100 A 30 V 1.15 mΩ 2V 0.8V +20 V SO Surface Mount 8 Single Enhancement Power MOSFET 104 W 10180 pF @ 15 V 102 nC @ 10 V 6.25 x 5.26 x 1.12mm 78 ns TrenchFET 51 ns 110s 5.26mm 1.12mm 6.25mm 1.1V +150 °C 1 -55 °C - -
IRFU420PBF N-Channel MOSFET, 2.4 A, 500 V, 3-Pin IPAK Vishay
  • € 0,48
  • Each (On a Reel of 3000)
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Vishay N 2.4 A 500 V 3 Ω 4V 2V ±20 V IPAK, TO-251 PCB Mount 3 Single Enhancement Power MOSFET 2.5 W 360 pF 19 (Maximumn) nC 6.73 x 6.22 x 2.39mm 33 ns - 8 ns - 6.22mm 2.39mm 6.73mm - +150 °C 1 -55 °C - -
SIS415DNT-T1-GE3 P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212 Vishay Vishay P 22 A 20 V 9.5 mΩ - 0.4V -12 V, +12 V PowerPAK 1212 Surface Mount 8 Single Enhancement Power MOSFET 52 W 5460 pF @ -10V 117 nC @ 10 V 3.15 x 3.15 x 0.8mm 83 ns - 37 ns - 3.4mm 0.8mm 3.4mm - +150 °C 1 -55 °C Si -
SIA923EDJ-T1-GE3 Dual P-Channel MOSFET, 4.5 A, 20 V, 6-Pin SOT-363 (SC-70) Vishay Vishay P 4.5 A 20 V 165 mΩ - 0.5V -8 V, +8 V SOT-363 (SC-70) Surface Mount 6 Isolated Enhancement Power MOSFET 7.8 W - 16.3 nC @ 8 V 2.15 x 2.15 x 0.8mm 30 ns - 15 ns - 2.15mm 0.8mm 2.15mm - +150 °C 2 -55 °C Si -
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