Documente tehnice
Specificatii
Marca
WolfspeedChannel Type
N
Maximum Continuous Drain Current
325 A
Maximum Drain Source Voltage
1700 V
Tip pachet
Half Bridge
Montare
Screw Mount
Numar pini
7
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
1.76 kW
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Transistor Material
SiC
Latime
61.4mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
106.4mm
Typical Gate Charge @ Vgs
1076 nC @ 20 V, 1076 nC @ 5 V
Inaltime
30mm
Frecventa minima de auto-rezonanta
-40 °C
Forward Diode Voltage
2.5V
Detalii produs
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1.284,98
Buc. (fara TVA)
€ 1.529,13
Buc. (cu TVA)
1
€ 1.284,98
Buc. (fara TVA)
€ 1.529,13
Buc. (cu TVA)
1
Documente tehnice
Specificatii
Marca
WolfspeedChannel Type
N
Maximum Continuous Drain Current
325 A
Maximum Drain Source Voltage
1700 V
Tip pachet
Half Bridge
Montare
Screw Mount
Numar pini
7
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
1.76 kW
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Transistor Material
SiC
Latime
61.4mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
106.4mm
Typical Gate Charge @ Vgs
1076 nC @ 20 V, 1076 nC @ 5 V
Inaltime
30mm
Frecventa minima de auto-rezonanta
-40 °C
Forward Diode Voltage
2.5V
Detalii produs
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.