Documente tehnice
Specificatii
Marca
WolfspeedChannel Type
N
Maximum Continuous Drain Current
193 A
Maximum Drain Source Voltage
1200 V
Tip pachet
Half Bridge
Montare
Screw Mount
Numar pini
7
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
925 W
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Latime
61.4mm
Number of Elements per Chip
2
Transistor Material
SiC
Lungime
106.4mm
Typical Gate Charge @ Vgs
378 nC @ 20 V
Temperatura maxima de lucru
+150 °C
Inaltime
30mm
Frecventa minima de auto-rezonanta
-40 °C
Forward Diode Voltage
2.4V
Tara de origine
China
Detalii produs
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 559,54
Buc. (Intr-o cutie de 10) (fara TVA)
€ 665,853
Buc. (Intr-o cutie de 10) (cu TVA)
10
€ 559,54
Buc. (Intr-o cutie de 10) (fara TVA)
€ 665,853
Buc. (Intr-o cutie de 10) (cu TVA)
10
Documente tehnice
Specificatii
Marca
WolfspeedChannel Type
N
Maximum Continuous Drain Current
193 A
Maximum Drain Source Voltage
1200 V
Tip pachet
Half Bridge
Montare
Screw Mount
Numar pini
7
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
925 W
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Latime
61.4mm
Number of Elements per Chip
2
Transistor Material
SiC
Lungime
106.4mm
Typical Gate Charge @ Vgs
378 nC @ 20 V
Temperatura maxima de lucru
+150 °C
Inaltime
30mm
Frecventa minima de auto-rezonanta
-40 °C
Forward Diode Voltage
2.4V
Tara de origine
China
Detalii produs
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.