Documente tehnice
Specificatii
Marca
WolfspeedChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
900 V
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Temperatura maxima de lucru
+150 °C
Transistor Material
SiC
Lungime
16.13mm
Typical Gate Charge @ Vgs
9.5 nC @ 15 V
Latime
21.1mm
Number of Elements per Chip
1
Forward Diode Voltage
4.8V
Inaltime
5.21mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 4,73
Each (In a Tube of 30) (fara TVA)
€ 5,629
Each (In a Tube of 30) (cu TVA)
30
€ 4,73
Each (In a Tube of 30) (fara TVA)
€ 5,629
Each (In a Tube of 30) (cu TVA)
30
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
30 - 120 | € 4,73 | € 141,90 |
150 - 270 | € 4,44 | € 133,20 |
300+ | € 4,29 | € 128,70 |
Documente tehnice
Specificatii
Marca
WolfspeedChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
900 V
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Temperatura maxima de lucru
+150 °C
Transistor Material
SiC
Lungime
16.13mm
Typical Gate Charge @ Vgs
9.5 nC @ 15 V
Latime
21.1mm
Number of Elements per Chip
1
Forward Diode Voltage
4.8V
Inaltime
5.21mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.