Documente tehnice
Specificatii
Marca
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Latime
10.99mm
Transistor Material
SiC
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
3.8V
Inaltime
4.57mm
Tara de origine
China
Detalii produs
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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€ 8,78
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€ 10,448
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€ 8,78
Buc. (Intr-un pachet de 2) (fara TVA)
€ 10,448
Buc. (Intr-un pachet de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 8 | € 8,78 | € 17,56 |
10 - 18 | € 7,97 | € 15,94 |
20 - 48 | € 7,71 | € 15,42 |
50 - 98 | € 7,45 | € 14,90 |
100+ | € 7,18 | € 14,36 |
Documente tehnice
Specificatii
Marca
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Latime
10.99mm
Transistor Material
SiC
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
3.8V
Inaltime
4.57mm
Tara de origine
China
Detalii produs
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.