Documente tehnice
Specificatii
Marca
VishayTimp montare
Through Hole
Tip pachet
TO-247AC
Maximum Continuous Forward Current
15A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Numar pini
2
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
60ns
Peak Non-Repetitive Forward Surge Current
150A
Detalii produs
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 5,35
€ 5,35 Buc. (fara TVA)
€ 6,37
€ 6,37 Buc. (cu TVA)
1
€ 5,35
€ 5,35 Buc. (fara TVA)
€ 6,37
€ 6,37 Buc. (cu TVA)
1
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
1 - 9 | € 5,35 |
10 - 49 | € 4,77 |
50 - 99 | € 4,25 |
100 - 249 | € 3,89 |
250+ | € 3,53 |
Documente tehnice
Specificatii
Marca
VishayTimp montare
Through Hole
Tip pachet
TO-247AC
Maximum Continuous Forward Current
15A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Numar pini
2
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
60ns
Peak Non-Repetitive Forward Surge Current
150A
Detalii produs
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.