Vishay VS-GB90DA120U IGBT, 149 A 1200 V, 4-Pin SOT-227, Panel Mount

Nr. stoc RS: 145-1739Producator: VishayCod de producator: VS-GB90DA120U
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Documente tehnice

Specificatii

Marca

Vishay

Maximum Continuous Collector Current

149 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

862 W

Tip pachet

SOT-227

Timp montare

Panel Mount

Channel Type

N

Numar pini

4

Switching Speed

60kHz

Transistor Configuration

Single

Dimensiuni

38.3 x 25.7 x 12.3mm

Temperatura minima de lucru

-40 °C

Temperatura maxima de lucru

+150 °C

Tara de origine

Philippines

Detalii produs

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Vishay VS-GB90DA120U IGBT, 149 A 1200 V, 4-Pin SOT-227, Panel Mount

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Vishay VS-GB90DA120U IGBT, 149 A 1200 V, 4-Pin SOT-227, Panel Mount
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Documente tehnice

Specificatii

Marca

Vishay

Maximum Continuous Collector Current

149 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

862 W

Tip pachet

SOT-227

Timp montare

Panel Mount

Channel Type

N

Numar pini

4

Switching Speed

60kHz

Transistor Configuration

Single

Dimensiuni

38.3 x 25.7 x 12.3mm

Temperatura minima de lucru

-40 °C

Temperatura maxima de lucru

+150 °C

Tara de origine

Philippines

Detalii produs

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.