Vishay VS-CPV364M4UPBF, IMS-2 , N-Channel Common Collector IGBT Module, 20 A max, 600 V, Through Hole

Nr. stoc RS: 165-2778Producator: VishayCod de producator: VS-CPV364M4UPBF
brand-logo

Documente tehnice

Specificatii

Marca

Vishay

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Tip pachet

IMS-2

Configuration

Common Collector

Timp montare

Through Hole

Channel Type

N

Numar pini

13

Transistor Configuration

3 Phase

Dimensiuni

62.43 x 7.87 x 21.97mm

Temperatura minima de lucru

-40 °C

Temperatura maxima de lucru

+150 °C

Tara de origine

Italy

Detalii produs

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Informatii despre stoc temporar indisponibile.

Incercati din nou mai tarziu

Informatii despre stoc temporar indisponibile.

P.O.A.

Vishay VS-CPV364M4UPBF, IMS-2 , N-Channel Common Collector IGBT Module, 20 A max, 600 V, Through Hole

P.O.A.

Vishay VS-CPV364M4UPBF, IMS-2 , N-Channel Common Collector IGBT Module, 20 A max, 600 V, Through Hole
Informatii despre stoc temporar indisponibile.

Idei. creează. Colaborează

ÎNSCRIE-TE GRATIS

Fara taxe ascunse!

design-spark
design-spark
  • Descărcați și utilizați software-ul nostru DesignSpark pentru modelele dumneavoastră PCB și mecanice 3D
  • Vizualizați și contribuiți cu conținutul site-ului web și forumuri
  • Descărcați modele 3D, scheme și amprente de la peste un milion de produse
Click aici pentru a afla mai multe

Documente tehnice

Specificatii

Marca

Vishay

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Tip pachet

IMS-2

Configuration

Common Collector

Timp montare

Through Hole

Channel Type

N

Numar pini

13

Transistor Configuration

3 Phase

Dimensiuni

62.43 x 7.87 x 21.97mm

Temperatura minima de lucru

-40 °C

Temperatura maxima de lucru

+150 °C

Tara de origine

Italy

Detalii produs

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.