Documente tehnice
Specificatii
Marca
VishayTimp montare
Surface Mount
Tip pachet
DO-221BC
Maximum Continuous Forward Current
4A
Peak Reverse Repetitive Voltage
50V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Numar pini
2
Maximum Forward Voltage Drop
590mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
80A
Tara de origine
China
Detalii produs
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Schottky Rectifiers, Vishay Semiconductor
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Buc. (Intr-un pachet de 40) (cu TVA)
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€ 0,16
Buc. (Intr-un pachet de 40) (fara TVA)
€ 0,19
Buc. (Intr-un pachet de 40) (cu TVA)
40
Documente tehnice
Specificatii
Marca
VishayTimp montare
Surface Mount
Tip pachet
DO-221BC
Maximum Continuous Forward Current
4A
Peak Reverse Repetitive Voltage
50V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Numar pini
2
Maximum Forward Voltage Drop
590mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
80A
Tara de origine
China
Detalii produs
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.