Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
126 nC @ 10 V
Lungime
10.51mm
Inaltime
15.49mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Detalii produs
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 3,20
Buc. (Intr-un pachet de 2) (fara TVA)
€ 3,808
Buc. (Intr-un pachet de 2) (cu TVA)
2
€ 3,20
Buc. (Intr-un pachet de 2) (fara TVA)
€ 3,808
Buc. (Intr-un pachet de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 18 | € 3,20 | € 6,40 |
20 - 98 | € 2,90 | € 5,80 |
100 - 198 | € 2,59 | € 5,18 |
200 - 498 | € 2,42 | € 4,84 |
500+ | € 2,25 | € 4,50 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
126 nC @ 10 V
Lungime
10.51mm
Inaltime
15.49mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Detalii produs