Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Tip pachet
PowerPAK SO-8L
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
6.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4.47mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
5mm
Typical Gate Charge @ Vgs
48.2 nC @ 10 V
Inaltime
1.01mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Tara de origine
China
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Incercati din nou mai tarziu
€ 0,46
Buc. (Livrat pe rola) (fara TVA)
€ 0,547
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 0,46
Buc. (Livrat pe rola) (fara TVA)
€ 0,547
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Tip pachet
PowerPAK SO-8L
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
6.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4.47mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
5mm
Typical Gate Charge @ Vgs
48.2 nC @ 10 V
Inaltime
1.01mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Tara de origine
China