Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Dimensiune celula
SQ Rugged
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.02mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,59
Buc. (Intr-un pachet de 20) (fara TVA)
€ 0,702
Buc. (Intr-un pachet de 20) (cu TVA)
20
€ 0,59
Buc. (Intr-un pachet de 20) (fara TVA)
€ 0,702
Buc. (Intr-un pachet de 20) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 180 | € 0,59 | € 11,80 |
200 - 480 | € 0,46 | € 9,20 |
500 - 980 | € 0,37 | € 7,40 |
1000 - 1980 | € 0,29 | € 5,80 |
2000+ | € 0,23 | € 4,60 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Dimensiune celula
SQ Rugged
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.02mm
Tara de origine
China
Detalii produs