Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
94.6 A
Maximum Drain Source Voltage
30 V
Tip pachet
PowerPAIR 6 x 5
Dimensiune celula
SiZ998BDT
Numar pini
8
Maximum Drain Source Resistance
0.00439 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Informatii indisponibile despre stoc
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Informatii indisponibile despre stoc
P.O.A.
Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3
3000
P.O.A.
Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3
Informatii indisponibile despre stoc
3000
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
94.6 A
Maximum Drain Source Voltage
30 V
Tip pachet
PowerPAIR 6 x 5
Dimensiune celula
SiZ998BDT
Numar pini
8
Maximum Drain Source Resistance
0.00439 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2