Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
33.4 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
SiZ342ADT
Tip pachet
PowerPAIR 3 x 3
Numar pini
9
Maximum Drain Source Resistance
0.0094 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
2
Informatii indisponibile despre stoc
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Informatii indisponibile despre stoc
P.O.A.
Dual N-Channel MOSFET, 33.4 A, 30 V, 9-Pin PowerPAIR 3 x 3 Vishay SiZ342ADT-T1-GE3
3000
P.O.A.
Dual N-Channel MOSFET, 33.4 A, 30 V, 9-Pin PowerPAIR 3 x 3 Vishay SiZ342ADT-T1-GE3
Informatii indisponibile despre stoc
3000
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
33.4 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
SiZ342ADT
Tip pachet
PowerPAIR 3 x 3
Numar pini
9
Maximum Drain Source Resistance
0.0094 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
2