Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
63 A
Maximum Drain Source Voltage
80 V
Tip pachet
PowerPAK 1212-8S
Numar pini
8
Maximum Drain Source Resistance
0.0072 Ω, 0.0095 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Number of Elements per Chip
1
Dimensiune celula
TrenchFET® Gen IV
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Informatii indisponibile despre stoc
P.O.A.
N-Channel MOSFET, 63 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS32LDN-T1-GE3
3000
P.O.A.
N-Channel MOSFET, 63 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS32LDN-T1-GE3
Informatii indisponibile despre stoc
3000
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
63 A
Maximum Drain Source Voltage
80 V
Tip pachet
PowerPAK 1212-8S
Numar pini
8
Maximum Drain Source Resistance
0.0072 Ω, 0.0095 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Number of Elements per Chip
1
Dimensiune celula
TrenchFET® Gen IV