Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
PowerPAK SO-8
Dimensiune celula
TrenchFET
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Latime
5.26mm
Forward Diode Voltage
1.1V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.12mm
Detalii produs
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,59
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,892
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,59
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,892
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,59 | € 7,95 |
50 - 120 | € 1,30 | € 6,50 |
125 - 245 | € 1,21 | € 6,05 |
250 - 495 | € 1,12 | € 5,60 |
500+ | € 1,04 | € 5,20 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
PowerPAK SO-8
Dimensiune celula
TrenchFET
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Latime
5.26mm
Forward Diode Voltage
1.1V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.12mm
Detalii produs