Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Tip pachet
PowerPAK SO-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Lungime
6.25mm
Temperatura minima de lucru
-55 °C
Inaltime
1.12mm
Forward Diode Voltage
1.1V
Detalii produs
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,96
Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,332
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,96
Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,332
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,96 | € 9,80 |
50 - 120 | € 1,62 | € 8,10 |
125 - 245 | € 1,41 | € 7,05 |
250 - 495 | € 1,16 | € 5,80 |
500+ | € 0,92 | € 4,60 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Tip pachet
PowerPAK SO-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Lungime
6.25mm
Temperatura minima de lucru
-55 °C
Inaltime
1.12mm
Forward Diode Voltage
1.1V
Detalii produs