Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
34.4 A
Maximum Drain Source Voltage
200 V
Tip pachet
SO
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
39 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
31.9 nC @ 10 V
Inaltime
1.12mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Detalii produs
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
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P.O.A.
5
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
34.4 A
Maximum Drain Source Voltage
200 V
Tip pachet
SO
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
39 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
31.9 nC @ 10 V
Inaltime
1.12mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Detalii produs