Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
34.4 A
Maximum Drain Source Voltage
200 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
39 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
31.9 nC @ 10 V
Inaltime
1.12mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Detalii produs
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
34.4 A
Maximum Drain Source Voltage
200 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
39 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
31.9 nC @ 10 V
Inaltime
1.12mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Detalii produs