Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Tip pachet
PowerPAK SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Latime
5.26mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.12mm
Dimensiune celula
TrenchFET
Detalii produs
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,55
Buc. (Intr-un pachet de 2) (fara TVA)
€ 3,034
Buc. (Intr-un pachet de 2) (cu TVA)
2
€ 2,55
Buc. (Intr-un pachet de 2) (fara TVA)
€ 3,034
Buc. (Intr-un pachet de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 18 | € 2,55 | € 5,10 |
20 - 98 | € 2,32 | € 4,64 |
100 - 198 | € 2,09 | € 4,18 |
200 - 498 | € 1,95 | € 3,90 |
500+ | € 1,82 | € 3,64 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Tip pachet
PowerPAK SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Latime
5.26mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.12mm
Dimensiune celula
TrenchFET
Detalii produs