Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Tip pachet
PowerPAK SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Latime
5.26mm
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Inaltime
1.12mm
Dimensiune celula
TrenchFET
Detalii produs
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
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Buc. (Pe o rola de 3000) (fara TVA)
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Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 1,46
Buc. (Pe o rola de 3000) (fara TVA)
€ 1,737
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Tip pachet
PowerPAK SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Latime
5.26mm
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Inaltime
1.12mm
Dimensiune celula
TrenchFET
Detalii produs