Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Lungime
6.25mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.12mm
Dimensiune celula
TrenchFET
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Detalii produs
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
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P.O.A.
5
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Lungime
6.25mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.12mm
Dimensiune celula
TrenchFET
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Detalii produs