Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
95 A
Maximum Drain Source Voltage
100 V
Tip pachet
PowerPAK SO-8
Numar pini
8
Maximum Drain Source Resistance
0.0048 Ω, 0.00585 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Number of Elements per Chip
1
Dimensiune celula
TrenchFET® Gen IV
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Informatii indisponibile despre stoc
P.O.A.
N-Channel MOSFET, 95 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR170DP-T1-RE3
3000
P.O.A.
N-Channel MOSFET, 95 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR170DP-T1-RE3
Informatii indisponibile despre stoc
3000
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
95 A
Maximum Drain Source Voltage
100 V
Tip pachet
PowerPAK SO-8
Numar pini
8
Maximum Drain Source Resistance
0.0048 Ω, 0.00585 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Number of Elements per Chip
1
Dimensiune celula
TrenchFET® Gen IV