Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220AB
Dimensiune celula
E Series
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Lungime
10.51mm
Typical Gate Charge @ Vgs
49 nC @ 10 V
Latime
4.65mm
Number of Elements per Chip
1
Inaltime
15.49mm
Forward Diode Voltage
1.2V
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 5,74
Each (In a Tube of 50) (fara TVA)
€ 6,831
Each (In a Tube of 50) (cu TVA)
50
€ 5,74
Each (In a Tube of 50) (fara TVA)
€ 6,831
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 5,74 | € 287,00 |
100+ | € 5,25 | € 262,50 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220AB
Dimensiune celula
E Series
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Lungime
10.51mm
Typical Gate Charge @ Vgs
49 nC @ 10 V
Latime
4.65mm
Number of Elements per Chip
1
Inaltime
15.49mm
Forward Diode Voltage
1.2V
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).