Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Latime
4mm
Transistor Material
Si
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,85
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,012
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 0,85
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,012
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 0,85 | € 8,50 |
100 - 240 | € 0,77 | € 7,70 |
250 - 490 | € 0,69 | € 6,90 |
500 - 990 | € 0,64 | € 6,40 |
1000+ | € 0,60 | € 6,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Latime
4mm
Transistor Material
Si
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs