Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
60 V
Tip pachet
PowerPAK 1212-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.05mm
Latime
3.05mm
Frecventa minima de auto-rezonanta
-65 °C
Inaltime
1.04mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,06
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,261
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,06
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,261
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,06 | € 5,30 |
50 - 245 | € 0,71 | € 3,55 |
250 - 495 | € 0,63 | € 3,15 |
500 - 1245 | € 0,52 | € 2,60 |
1250+ | € 0,47 | € 2,35 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
60 V
Tip pachet
PowerPAK 1212-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.05mm
Latime
3.05mm
Frecventa minima de auto-rezonanta
-65 °C
Inaltime
1.04mm
Tara de origine
China
Detalii produs