Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Tip pachet
PowerPAK ChipFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
10.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
3.08mm
Typical Gate Charge @ Vgs
7 nC @ 10 V
Latime
1.98mm
Transistor Material
Si
Number of Elements per Chip
2
Inaltime
0.85mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
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P.O.A.
20
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Tip pachet
PowerPAK ChipFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
10.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
3.08mm
Typical Gate Charge @ Vgs
7 nC @ 10 V
Latime
1.98mm
Transistor Material
Si
Number of Elements per Chip
2
Inaltime
0.85mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs