Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
30 V
Tip pachet
1206 ChipFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.12 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Latime
1.7mm
Number of Elements per Chip
2
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
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Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
30 V
Tip pachet
1206 ChipFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.12 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Latime
1.7mm
Number of Elements per Chip
2
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China