Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+175 °C
Lungime
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Latime
4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.5mm
Detalii produs
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,44
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,714
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,44
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,714
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,44 | € 7,20 |
50 - 245 | € 1,19 | € 5,95 |
250 - 495 | € 0,96 | € 4,80 |
500 - 1245 | € 0,79 | € 3,95 |
1250+ | € 0,71 | € 3,55 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+175 °C
Lungime
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Latime
4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.5mm
Detalii produs